Creating a memristor-diode matrix of RAM For Tool

Author: amiran bibilashvili
Co-authors: Zurab Kushitashvili; Beqa Melua.
Keywords: memristor, crossbar, diode, magnetron dissipation.
Annotation:

A new electronics component combined crossbar - active memristor and semiconductor diode, in a single cell, is presented with the topology and technology of manufacture. This allows for the creation of an electronics micro element with a new component. The ultimate goal is to insert the planar memorization tool, or memristor, into the current cycle of technological processes for obtaining an integral circuit. The technological route of the manufacture of a memristor-diode crossbar cell and the corresponding photo template on its basis were developed. Full and incomplete, layers of the active layer of the memristor, Hafnium, are designed by the Ultra Violet (UV) beam-stimulated reactive magnetic dissipation method. A semiconductor diode is obtained in a P-type silicon diaper with a thermal diffusion of phosphorus. By parallel insertion of the memristor between the two diode, the parasitic (leakage) current in the matrix is reduced, which will increase the quality of the memorization tool parameters built on it. The recommendation is given for the use of combined crossbar integral micro circuit (IMC) elements obtained by the developed technology and for the manufacture of micro and nanoparticle tools.

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